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AP2604Y
Advanced Power Electronics Corp.
Fast Switching Characteristic Lower Gate Charge Small Footprint & Low Profile Package SOT-26
D D S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
G D D
30V 45m 5.5A
ID
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The S0T-26 package is universally used for all commercial-industrial applications.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.5V Pulsed Drain Current
1
Rating 30 20 5.5 4.4 20 2 0.016 -55 to 150 -55 to 150
Units V V A A A W W/
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit /W
Data and specifications subject to change without notice
200115041
AP2604Y
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
2
Min. 30 1 -
Typ. 0.02 7 6 2 3 6 8 15 4 440 105 35
Max. Units 45 65 3 1 25 100 10 705 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=4.8A VGS=4.5V, ID=2.4A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C)
o o
VDS=VGS, ID=250uA VDS=10V, ID=4.8A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= 20V ID=4.8A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2
Test Conditions IS=4.8A, VGS=0V IS=4.8A, VGS=0V, dI/dt=100A/s
Min. -
Typ. 15 7
Max. Units 1.2 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 156/W when mounted on min. copper pad.
AP2604Y
40 35
35
T A =25 C
o
10V 7.0V ID , Drain Current (A)
30
T A =150 o C 10V 7.0V 5.0V 4.5V
30
25
ID , Drain Current (A)
25
5.0V
20
20
4.5V
15
15
10
10
5
V G =3.0V
5
V G =3.0V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
75
1.8
I D = 2.4 A
65
1.6
T A =25 C Normalized RDS(ON)
1.4
o
I D =4.8A V G =10V
RDS(ON) (m )
55
1.2
45
1.0
35
0.8
25 3 5 7 9 11
0.6
-50
0
50
100
150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1.8
5
1.6
4
1.4
VGS(th)(V)
1.4
3
IS(A)
T j =150 o C
2
T j =25 o C
1.2
1
1
0.8
0
0.6 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
AP2604Y
f=1.0MHz
16 1000
VGS , Gate to Source Voltage (V)
I D =4.8A C iss
12
V DS =15V V DS =20V V DS =24V C (pF)
100
8
C oss
4
C rss
0
10
0
2
4
6
8
10
12
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
10
0.1
0.1
1ms ID (A)
1
0.05
PDM
0.01
10ms 100ms
0.1
t T
0.01
Single Pulse
Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 156/W
T A =25 o C Single Pulse
1s DC
0.01 0.1 1 10 100
0.001 0.0001 0.001 0.01 0.1 1 10 100 1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 4.5V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform

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